Molecular engineering for donor electron to enhance photodiode properties of Co/n-Si and Co/p-Si structures: The effect of hematoxylin interface
Citation
Kocyigit, A., Yilmaz, M., İncekara, Ü., Aydogan, S., & Kacus, H. (2021). Molecular engineering for donor electron to enhance photodiode properties of Co/n-si and Co/p-si structures: The effect of hematoxylin interface. Optik, 242 doi:10.1016/j.ijleo.2021.167314Abstract
We used hemotoxylin as interlayer in between Co metal and both n-type and p-type silicon to
fabricate Co/hematoxylin/n-Si and Co/hematoxylin/p-Si photodiodes. The photodiodes were
characterized and compared by I-V measurements under dark and various light power intensities.
The diode parameters were extracted from I-V measurements and discussed in details by
thermionic emission theory, Norde and Cheung methods for dark conditions. The photodiode
parameters such as photocurrent, light responsivity and detectivity were also studied and
compared for two photodiodes. The obtained photodiodes exhibited good rectifying properties,
but rectifying ratio (RR) values decreased with increasing light power intensity. The photodiodes
exhibited linear photocurrent (Iph), good responsivity and detectivity according to results.
However, the responsivity and detectivity values of the Co/hematoxylin/n-Si photodiode slightly
decreased with increasing light power intensity while the Co/hematoxylin/p-Si photodiode have
almost did not change. The obtained result highlighted that Co/hematoxylin/n-Si and Co/hematoxylin/p-Si photodiodes can be improved for photodiode applications.