Production and Characterization of Electrodeposited Cadmium Sulfide Semiconductor Films with Different Boron Content

Abstract

In this study, Cadmium Sulfide (CdS) semiconductor films are electrodeposited on Indium Tin Oxide (ITO) substrates at 80 degrees C base temperature for different boric acid (H3BO3) ratios. The effect of boric acid on these films is investigated. For this, first of all, the structural change of the films is examined. Among the films obtained with different boric acid ratios, the optimum film is achieved with 0.06 m boric acid doped. From the basic absorption spectra (alpha hv) of the obtained CdS:B films, the variation of hv is drawn and it is determined that the CdS:B semiconductor films has a direct band transition. From the basic absorption spectra of the obtained CdS:B films, it is observed that the CdS:B semiconductor films has a direct band transition. In addition, the optical energy bandgap values obtained are in agreement with the values in the available literatures. The results of the structural, optical, and morphological properties of the films produced in this study indicate that among the selected additive ratios, 1% boric acid gives the best and optimum deposition condition. The thin films obtained are also found to be useful as absorber layers in photovoltaic solar cells. Cadmium Sulfide (CdS) is of great interest to researchers and is considered to be an important semiconductor material. The reason for the increasing interest in CdS is the development of new production techniques and the production of more functional CdS nanostructures and this allows the production of boron-doped CdS-based electronic and optoelectronic devices. image