The Electrical Characteristics of the Co/Giemsa/n-Si Heterostructure Depending on Measurement Temperatures and Frequencies

Abstract

Giemsa dye was used as an interlayer film structure between Co metal and n-type silicon to fabricate Co/giemsa/n-Si heterostructure to determine various electrical behaviors. For that reason, temperature-dependent current voltage (I-V) and frequency-dependent capacitance voltage (C-V) measurements were employed to reveal electrical properties of the Co/giemsa/n-Si heterostructure for wide range temperature and frequency. Various junction parameters such as series resistance, barrier height, and ideality factor values were determined from I-V characteristics by thermionic emission (TE), Cheung, and Norde methods. The results revealed that the junction parameters were strong function of the measurement temperature. Frequency dependent C-V characteristics were also utilized for extraction of various electrical parameters such as maximum electric field, depletion width, barrier height, etc. The results highlighted that all electrical parameters changed as function of the frequency and voltage. The Co/giemsa/n-Si heterostructure can be improved for thermal sensing and switching applications.