Tunable semiconducting behavior with addition of gallium (Ga)-Boron (B) Dual-doped elements in CdO thin films

Abstract

In this study, CdO thin films with pure and volume ratios of (1.5% and 1.5%) B and Ga separately and dual-doped werecoated on ITO substrate using electrodeposition method. Structural, optical and morphological properties of pure, B andGa dual-doped CdO films coated on ITO were investigated. XRD measurements revealed that the crystal structure of CdOwas disrupted and the crystal size decreased in the B and Ga dual-doped CdO films. As a result of optical measurements,it was observed that the optical band gap decreased as the doping ratio increased. As a result of morphological measurements, it was observed that the surface of all film was homogeneous. Spectroscopic ellipsometry was used to determine that the refractive index, extinction coefficient, dielectric constants, and dissipation factor were determined to change with the concentration of B and Ga dual doping. Refractive index values ranged from 0.8 to 2 and extinction coefficient values from 0.05 to 1.2. The dielectric constant values also show significant variation in the visible region.