Modification of barrier diode with cationic dye for high power applications

Abstract

Current-voltage (I-V) measurements of Au/methylene blue (MB)/p-Si/Al diode were taken at room temperature, in the dark and under illumination and also in a wide temperature range (100-360 K). Schottky diode showed non-ideal current-voltage behavior at 360 K and 100 K with ideality factors (n) equal to 1.81-1.46 and 3.52-2.73, respectively, using TE and Cheung methods. Experimental barrier height (phi(b)) values of the diode were determined as 0.29 eV for TE, 0.33 eV for Cheung and 0.38 eV for Norde at 100 K, and 0.79, 0.81, and 0.87 eV at 360 K, respectively. Series resistance (R-s) was found with the help of Cheung functions and Norde functions. The results show that the produced diode can be used in a variety of optoelectronic applications.