Time dependent quantum transport through Kondo correlated quantum dots

dc.contributor.authorGoker, A.
dc.contributor.authorGedik, E.
dc.date.accessioned2025-05-20T18:48:00Z
dc.date.issued2014
dc.departmentBilecik Şeyh Edebali Üniversitesi
dc.description.abstractIn this chapter, we review recent work about time dependent quantum transport through a quantum dot in Kondo regime. This represents a major step towards designing next generation transistors that are expected to replace current MOSFET's in a few years. We first discuss the effects of the density of states of gold contacts on the instantaneous conductance of an asymmetrically coupled quantum dot that is abruptly moved into Kondo regime via a gate voltage. Next, we investigate the effect of strong electron-phonon coupling on the dot on the instantaneous conductance. Finally, we discuss thermoelectric effects using linear response Onsager relations for a quantum dot that is either abruptly moved into Kondo regime or driven sinusoidally via a gate voltage. We explain encountered peculiarities in transport based on the behaviour of the density of states of the dot and the evolution of the Kondo resonance. © 2014 by Nova Science Publishers, Inc. All rights reserved.
dc.identifier.endpage314
dc.identifier.isbn978-162948569-0
dc.identifier.isbn978-162948566-9
dc.identifier.scopus2-s2.0-84951772437
dc.identifier.scopusqualityN/A
dc.identifier.startpage293
dc.identifier.urihttps://hdl.handle.net/11552/6768
dc.identifier.volume3
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherNova Science Publishers, Inc.
dc.relation.ispartofHandbook of Functional Nanomaterials
dc.relation.publicationcategoryKitap Bölümü - Uluslararası
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_Scopus_20250518
dc.subjectKondo
dc.subjectQuantum dots
dc.subjectTunneling
dc.titleTime dependent quantum transport through Kondo correlated quantum dots
dc.typeBook Part

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