Semiconductor-based Photodiodes

Abstract

Photodiodes are important devices in modern technology due to their light-sensing ability. They can detect the energy of light and convert it into useful electrical signals for various optoelectronic applications such as cameras, communication devices, medical instruments, wearable devices, automatic brightness control in displays, solar light tracking, daylight harvesting, and environmental and medical monitoring systems. Many studies have focused on improving their performances in the case of low noise, high sensitivity, high quantum efficiency, and very short reaction time. For that aim, various designs and materials such as 2D materials, metal oxides, perovskites, and quantum dots have been investigated. While graphene and transition metal dichalcogenides are generally used as 2D materials for photodetectors, TiO2 and ZnO are used for metal oxides. Various perovskites such as CsPbBr3, MAPbBr3, etc., and quantum dots of PbS and HgTe are employed. This chapter gives information about photodiodes: the detection principles of light energy, the materials and designs for photodiodes, key parameters to obtain high performance from photodiodes, types of photodiodes such as PN, PIN, avalanche, and Schottky photodiodes, and applications areas of the photodiodes and emerging trends in photodiode technology. © 2025 selection and editorial matter, Ram K. Gupta, individual chapters, the contributors.