Al, Cu doped-undoped TiO2 thin film deposition and the effect of doping on film properties

Abstract

In this study, undoped TiO2 films were first produced by dip coating method. Optimum doped and undoped thin film deposition parameters were determined by compiling preliminary trials and previous studies. The number of dipping repetitions was 8 times, the dipping time was 90 seconds, the drying temperature between the processes was 110 degrees C, the time was 150 seconds, the annealing temperature was 500 degrees C and the duration was 2 hours. The effects of doping with Al and Cu metals with different physical properties on the surface, structural and optical properties of TiO2 thin films were investigated. The changes in the physical properties of TiO2 thin films were determined by increasing the doping ratios (1%, 3%, 5%). When SEM images are examined; It was determined that TiO2 thin films were deposited homogeneously on the glass substrates and Al doping reduced the particle size in the TiO2 film layers, while Cu doping increased the particle size. As a result of the calculations with the XRD analysis spectrum data, it was seen that the changes in particle size were compatible with the SEM images. For undoped TiO2 thin films, the known net peaks of TiO2 in the Anatase phase, the peaks caused by Al and Cu doping were detected in the XRD spectrum, and it was determined that the thin film was successfully deposited. When the optical properties were examined, the band gap was calculated as 3.21eV for the TiO2 Thin film. It was determined that the band gap of the TiO2 thin films increased with Al doping and the band gap decreased with Cu doping.